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| MBRF735 - MBRF7150 Isolated 7.5 AMPS. Schottky Barrier Rectifiers ITO-220AC .185(4.7) .173(4.4) .124(3.16) .118(3.00) .406(10.3) .390(9.90) .134(3.4)DIA .113(3.0)DIA .272(6.9) .248(6.3) .112(2.85) .100(2.55) Features Plastic material used carries Underwriters Laboratory Classifications 94V-0 Metal silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Guardring for overvoltage protection High temperature soldering guaranteed: 260oC/10 seconds,0.25"(6.35mm)from case .606(15.5) .583(14.8) .063(1.6) MAX .161(4.1) .146(3.7) .110(2.8) .098(2.5) .030(0.76) .020(0.50) .055(1.4) .043(1.1) .035(0.9) .020(0.5) .071(1.8) MAX .543(13.8) .512(13.2) 2 .100(2.55) .100(2.55) PIN 1 Mechanical Data Cases: ITO-220AC molded plastic body Terminals: Pure tin plated, lead free. solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting position: Any Mounting torque: 5 in. - lbs. max Weight: 0.08 ounce, 2.24 grams PIN 2 CASE Case Positive Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol MBRF MBRF MBRF MBRF MBRF MBRF MBRF Units Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Repetitive Forward Current (Square Wave, 20KHz) at o Tc=105 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage at (Note 2) o IF=7.5A,Tc=25 C o IF=7.5A,Tc=125 C o IF=15A,Tc=25 C o IF=15A,Tc=125 C Maximum Instantaneous Reverse Current @ Tc =25 C o at Rated DC Blocking Voltage (Note 1) @ Tc=125 C Voltage Rate of Change (Rated VR) Typical Junction Capacitance Maximum Thermal Resistance, (Note 3) Operating Junction Temperature Range Storage Temperature Range Notes: o VRRM VRMS VDC I(AV) IFRM IFSM IRRM VF IR dV/dt Cj 735 35 24 35 745 45 31 45 750 50 35 50 760 60 42 60 7.5 790 90 63 90 7100 100 70 100 7150 150 105 150 V V V A A A 15.0 150 1.0 0.57 0.84 0.72 0.75 0.65 0.5 0.92 0.82 1.02 0.92 - A V mA mA V/uS 200 pF o 0.1 15 350 0.1 10 10,000 280 7.0 -65 to +150 -65 to +175 0.1 5.0 RJC TJ TSTG C/W o C o C 1. 2.0us Pulse Width, f=1.0 KHz 2. Pulse Test: 300us Pulse Width, 1% Duty Cycle 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25in Al-plate. - 94 - Version: B07 RATINGS AND CHARACTERISTIC CURVES (MBRF735 THRU MBRF7150) FIG.1- FORWARD CURRENT DERATING CURVE 10 175 RESISTIVE OR INDUCTIVE LOAD 8 FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT. (A) Tj=Tj max. 8.3ms Single Half Sine Wave JEDEC Method AVERAGE FORWARD CURRENT. (A) 150 125 100 6 4 75 2 MBRF735-MBRF745 MBRF750-MBRF7150 0 0 50 100 o CASE TEMPERATURE. ( C) 150 50 25 1 10 NUMBER OF CYCLES AT 60Hz 100 40 FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 Pulse Width=300 s 1% Duty Cycle FIG.4- TYPICAL REVERSE CHARACTERISTICS MBRF735-MBRF745 MBRF750-MBRF7150 10 Tj=125 C 0 10 INSTANTANEOUS FORWARD CURRENT. (A) M F BR INSTANTANEOUS REVERSE CURRENT. (mA) 71 50 Tj=125 0C 1 790 RF -71 Tj=25 0C 1 00 MB 0.1 Tj=75 0C 0.1 0.01 MBRF735-MBRF745 MBRF750-MBRF760 MBRF790-MBRF7150 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 FORWARD VOLTAGE. (V) 0.001 0 Tj=25 0C 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 4,000 Tj=25 0C f=1.0MHz Vsig=50mVp-p 100 FIG.6- TYPICAL TRANSIENT THERMAL CHARACTERISTICS 1,000 TRANSIENT THERMAL IMPEDANCE. ( OC/W) 100 JUNCTION CAPACITANCE.(pF) 10 1 100 MBRF735-MBRF745 MBRF750-MBRF760 MBRF790-MBRF7150 0.1 1.0 10 REVERSE VOLTAGE. (V) 40 0.1 0.01 0.1 1 T, PULSE DURATION. (sec) 10 100 Version: B07 |
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